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STB20NM60A-1 STP20NM60A - STF20NM60A
N-CHANNEL 650V@Tjmax - 0.25 - 20A IPAK/TO-220/TO-220FP
MDmeshTM MOSFET
TYPE STB20NM60A-1 STP20NM60A STF20NM60A
s s s s
VDSS @Tjmax 650 V 650 V 650 V
RDS(on) < 0.29 < 0.29 < 0.29
ID 20 A 20 A 20 A
3
TYPICAL RDS(on) = 0.25 HIGH dv/dt LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE
3 12
1
2
IPAK
TO-220
3 1 2
DESCRIPTION The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESHTM horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s SPECIFICALLY DESIGNED FOR ADAPTORS IN QUASI-RESONANT CONFIGURATION
ORDER CODES
PART NUMBER STB20NM60A-1 STP20NM60A STF20NM60A MARKING B20NM60A P20NM60A F20NM60A PACKAGE I2PAK TO-220 TO-220FP PACKAGING TUBE TUBE TUBE
March 2004
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STB20NM60A-1/STP20NM60A/STF20NM60A
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value STB20NM60A-1 STP20NM60A VGS ID ID IDM ( ) PTOT dv/dt (1) VISO Tstg Tj Gate-source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature --55 to 150 20 12.6 80 192 1.2 15 2500 30 20(*) 12.6(*) 80(*) 45 0.36 STF20NM60A V A A A W W/C V/ns V C Unit
( ) Pulse width limited by safe operating area (1) ISD 20A, di/dt 400 A/s, VDD V(BR)DSS, Tj TJMAX. (*) Limited only by maximum temperature allowed
THERMAL DATA
I2PAK/TO-220 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 0.65 62.5 300 TO-220FP 2.8 C/W C/W C
Maximum Lead Temperature For Soldering Purpose
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) ON/OFF
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 30V VDS = VGS, ID = 250 A VGS = 10V, ID = 10A 2 3 0.25 Min. 600 1 10 100 4 0.29 Typ. Max. Unit V A A nA V
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STB20NM60A-1/STP20NM60A/STF20NM60A
ELECTRICAL CHARACTERISTICS (CONTINUED) DYNAMIC
Symbol gfs (1) Ciss Coss Crss Coss eq. (2) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance VGS = 0V, VDS = 0V to 400V Test Conditions VDS > ID(on) x RDS(on)max, ID = 10A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 11 1630 350 33 150 Max. Unit S pF pF pF pF
(1) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (2) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 300V, ID = 10 A RG = 4.7 VGS = 10V (see test circuit, Figure 3) VDD = 400V, ID = 20A, VGS = 10V Min. Typ. 20 16 45 8.2 19 60 Max. Unit ns ns nC nC nC
SWITCHING OFF
Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions VDD = 300V, ID = 20 A, RG = 4.7, VGS = 10V (see test circuit, Figure 5) Min. Typ. 46 20 Max. Unit ns ns
SOURCE DRAIN DIODE
Symbol ISD ISDM (2) VSD (1) trr Qrr Irrm trr Qrr Irrm Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 20 A, VGS = 0 ISD = 20 A, di/dt = 100A/s, VDD = 50 V, Tj = 25C (see test circuit, Figure 5) ISD = 20 A, di/dt = 100A/s, VDD = 50 V, Tj = 150C (see test circuit, Figure 5) 432 5.1 23.6 595 7.3 24.8 Test Conditions Min. Typ. Max. 20 80 1.5 Unit A A V ns C A ns C A
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.
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STB20NM60A-1/STP20NM60A/STF20NM60A
Safe Operating Area for TO-220/I2PAK Safe Operating Area for TO-220FP
Thermal Impedance for TO-220/I2PAK
Thermal Impedance for TO-220FP
Output Characteristics
Transfer Characteristics
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STB20NM60A-1/STP20NM60A/STF20NM60A
Transconductance Static Drain-Source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
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STB20NM60A-1/STP20NM60A/STF20NM60A
Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature
Typical Switching Time vs Rg
Typical Drain Current Slope vs Rg
Typical Drain Source Voltage Slope vs Rg
Typical Switching Losses vs Rg
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STB20NM60A-1/STP20NM60A/STF20NM60A
Typical Coss Stored Energy vs Rg
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STB20NM60A-1/STP20NM60A/STF20NM60A
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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STB20NM60A-1/STP20NM60A/STF20NM60A
TO-262 (I2PAK) MECHANICAL DATA
mm. DIM. MIN. A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 TYP MAX. 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 MIN. 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 TYP. MAX. 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 inch
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STB20NM60A-1/STP20NM60A/STF20NM60A
TO-220 MECHANICAL DATA
mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 oP Q
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STB20NM60A-1/STP20NM60A/STF20NM60A
TO-220FP MECHANICAL DATA
mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O
A
B
L3 L6 L7
F1
D
F
G1 H
F2
L2 L5
E
123
L4
G
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STB20NM60A-1/STP20NM60A/STF20NM60A
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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